AlGaAs-on-insulator Waveguides for Highly Efficient Photon Pair Generation

verfasst von

Hatam Mahmudlu, Stuart May, Ali Angulo, Marc Sorel, Michael Kues

Abstract

Efficient photon pair sources that provide high generation rates are necessary for applications in secure non-classical communication, quantum teleportation, and quantum information processing. This motivated the development of diverse integrated photon pair sources based on silicon nitride [1] , As 2 S 3 [2] , and AlGaAs [3]. In particular, the fabrication of AlGaAs-on-insulator (AlGaAs-OI) waveguides allows for submicrometer modal confinement, which leads to the enhancement of the effective nonlinearity in a material platform with low propagation losses. In addition, the high second χ (2) and third order χ (3) nonlinearities of AlGaAs [4] , and the possibility to modify the Al concentration of the alloy to reduce two-photon absorption (TPA) at telecom wavelengths [3] , make AlGaAs-OI a very promising candidate for highly efficient photon-pair generation via spontaneous parametric down conversion (SPDC) and spontaneous four-wave mixing (SFWM) processes.

Organisationseinheit(en)

Institut für Photonik
PhoenixD: Simulation, Fabrikation und Anwendung optischer Systeme

Externe Organisation(en)

University of Glasgow
Scuola Superiore Sant'Anna di Studi Universitari e di Perfezionamento

Typ

Aufsatz in Konferenzband

Publikationsdatum

2021

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Atom- und Molekularphysik sowie Optik

Elektronische Version(en)

https://doi.org/10.1109/CLEO/Europe-EQEC52157.2021.9542418 (Zugang: Geschlossen)